| AO6992 |
————————– – – —– ———— Q1 Q2
VDS – – – – – – – – – – – – – – 30V 30V
ID (at VGS=10V) —– —— — 50A 85A
RDS(ON) (at VGS=10V) < 5.2mΩ < 2mΩ
RDS(ON) (at VGS=4.5V) < 8.6mΩ < 2.5mΩ
EGP50.00
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AO6992
Type Designator: AON6992
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 21 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V
Maximum Drain Current |Id|: 50 A
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 340 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0052 Ohm
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