AON6970
AON6970
Q1 Q2
VDS – – – – – – – – – 30V 30V
ID (at VGS=10V) — — – 58A 85A
RDS(ON) (at VGS=10V) <5.4mΩ <1.5mΩ
RDS(ON) (at VGS=4.5V) <8.5mΩ <2.3mΩ
EGP75.00
واتس 635 633 01010
العنون:- مصر الجديدة- 60 الخليفة المامون - مول كوين سنتر الدور الثانى - شركة ام القرى
الراحة الاسبوعية : الجمعه
Product details
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Description
AON6970
Type Designator: AON6970
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 31(78) W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.3 V
Maximum Drain Current |Id|: 58(85) A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 15.5(16) nS
Drain-Source Capacitance (Cd): 284(1100) pF
Maximum Drain-Source On-State Resistance (Rds): 0.0054(0.0015) Ohm
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